Oct 24, 2019   6:39 a.m. Kvetoslava
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Persons at STU


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Ing. Juraj Priesol, PhD.
Identification number: 28614
University e-mail: juraj.priesol [at] stuba.sk
 
Výskumný pracovník s VŠ vzdelaním - Institute of Electronics and Phototonics (FEEIT)

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The selected person is an author of the following publications.

Ord.PublicationsType of resultYearDetails
1.Cathodoluminescence analysis of In-rich InAlN layers
Priesol, Juraj -- Šatka, Alexander -- Uherek, František -- Hasenöhrl, Stanislav -- Chauhan, Prerna -- Kuzmík, Ján
Cathodoluminescence analysis of In-rich InAlN layers. In WOCSDICE 2019. Cabourg, 2019: 2019.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
2.Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMT
Chvála, Aleš -- Nagy, Lukáš -- Marek, Juraj -- Priesol, Juraj -- Donoval, Daniel -- Šatka, Alexander -- Blaho, Michal -- Gregušová, Dagmar -- Kuzmík, Ján
Device and circuit models of monolithic InAlN/GaN NAND and NOR logic cells comprising D- and E-mode HEMT. Journal of Circuits Systems and Computers, 28. p. 2019.
articles in magazines2019Details
3.Diagnostics of InAlN layers by cathodoluminescence
Priesol, Juraj -- Šatka, Alexander -- Uherek, František -- Hasenöhrl, Stanislav -- Chauhan, Prerna -- Kuzmík, Ján
Využitie katódoluminiscencie pre diagnostiku InAlN vrstie. In MICHALKA, M. Fotonika 2018. Bratislava: Medzinárodné laserové centrum, 2019, p. 68--71. ISBN 978-80-972238-7-8.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
4.Characterization of a low-frequency noise of JFET transistors
Tisovský, Erik -- Šatka, Alexander -- Priesol, Juraj
Characterization of a low-frequency noise of JFET transistors. In JANDURA, D. -- ŠUŠLIK, Ľ. -- URBANCOVÁ, P. -- KOVÁČ, J. ADEPT 2019. Žilina: University of Žilina, 2019, p. 231--234. ISBN 978-80-554-1568-0.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
5.Characterization of monolithic InAlN/GaN NAND and NOR logic gates supported by circuit and device simulations
Chvála, Aleš -- Nagy, Lukáš -- Marek, Juraj -- Priesol, Juraj -- Donoval, Daniel -- Blaho, Michal -- Gregušová, Dagmar -- Kuzmík, Ján -- Šatka, Alexander
Characterization of monolithic InAlN/GaN NAND and NOR logic gates supported by circuit and device simulations. In WOCSDICE 2019. Cabourg, 2019: 2019.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
6.Measurement of noise characteristics of selected JFET devices
Tisovský, Erik -- Šatka, Alexander -- Priesol, Juraj
Measurement of noise characteristics of selected JFET devices. In KOZÁKOVÁ, A. ELITECH´19. Bratislava: Vydavateľstvo Spektrum STU, 2019, ISBN 978-80-227-4915-2.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
7.Measurement of the reverse recovery characteristics of p-n junction diodes by TDT and TDR methods
Vilhan, Martin -- Šatka, Alexander -- Priesol, Juraj
Measurement of the reverse recovery characteristics of p-n junction diodes by TDT and TDR methods. In JANDURA, D. -- ŠUŠLIK, Ľ. -- URBANCOVÁ, P. -- KOVÁČ, J. ADEPT 2019. Žilina: University of Žilina, 2019, p. 251--254. ISBN 978-80-554-1568-0.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
8.Neural network for circuit models of monolithic InAlN/GaN NAND and NOR logic gates
Chvála, Aleš -- Nagy, Lukáš -- Marek, Juraj -- Priesol, Juraj -- Donoval, Daniel -- Šatka, Alexander
Neural network for circuit models of monolithic InAlN/GaN NAND and NOR logic gates. In DTIS 2019. Danvers: IEEE, 2019, ISBN 978-1-7281-3424-6.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
9.Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability
Stoffels, Steve -- Posthuma, Niels -- Decoutere, Stefaan -- Bakeroot, Benoit -- Tallarico, Andrea N. -- Sangiorgi, Enrico C. -- Fiegna, Claudio -- Zheng, J. -- Ma, X. -- Borga, Matteo -- Fabris, Elena -- Meneghini, Matteo -- Zanoni, Enrico -- Meneghesso, Gaudenzio -- Priesol, Juraj -- Šatka, Alexander
Perimeter driven transport in the p-GaN gate as a limiting factor for gate reliability. In 2019 IEEE International Reliability Physics Symposium. Danvers: IEEE, 2019, ISBN 978-1-5386-9504-3.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
10.TDR and TDT methods for measuring pulse characteristics of semiconductor devices
Vilhan, Martin -- Šatka, Alexander -- Priesol, Juraj
TDR and TDT methods for measuring pulse characteristics of semiconductor devices. In KOZÁKOVÁ, A. ELITECH´19. Bratislava: Vydavateľstvo Spektrum STU, 2019, ISBN 978-80-227-4915-2.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details
11.The characterization of inorganic and organic materials by microscopy methods
Haško, Daniel -- Šatka, Alexander -- Priesol, Juraj
Charakterizácia anorganických a organických materiálov mikroskopickými metódami. In MICHALKA, M. Fotonika 2018. Bratislava: Medzinárodné laserové centrum, 2019, p. 65--67. ISBN 978-80-972238-7-8.
contributions in anthologies, chapters in monographs/textbooks, abstracts2019Details

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