Persons at STU
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Basic information about a final thesisAdditional informationAdditional information about the final thesis follows. Click on the language link to display the information in the desired language.
|Language of final thesis:||Slovak|
|Title of the thesis:||The investigation of semiconductor structures properties by DLTS method|
|Summary:||This work deals with the identification of deep energy levels in semiconductor structures based on Si using the Deep Level Transient Spectroscopy method. In the experimental part of this work two types of Schottky structures were examined: a referent with intentionally created deep levels of Au and a radiation detector, before and after neutron irradiation. Experiments were realized with the measuring system DL8000 at the Department of Microelectronics, Faculty of Electrical Engineering and Information Technologies, Slovak University of Technology in Bratislava. Further investigations were carried out using the software Dlts 2.6, Microsoft Office Excel 2007 and Origin Pro 7.5. According to the results of referent measurements, different methods of evaluation were compared. The effects of neutron irradiation were verified by analyzing the DLTS spectra, measured on the detector before and after the irradiation. Based on the experiences gained during the analysis of the measured DLTS spectra we created the basics for the section "Analysis and processing of DLTS spectra" in the learning module "DLTS", course "Electrical characterization of semiconductor structures and devices" located on the portal "eLearn central".|
|Key words:||DLTS, Deep energy levels, silicon|
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