Dec 7, 2019   2:59 a.m. Ambróz
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Institute of Nuclear and Physical Engineering (FEEIT) - list of publications


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ZAŤKO, B. -- HRUBČÍN, L. -- BOHÁČEK, P. -- OSVALD, J. -- ŠAGÁTOVÁ, A. -- SEKÁČOVÁ, M. -- KOVÁČOVÁ, E. -- NEČAS, V. Electrical properties of detector schottky diodes based on 4H-SiC high quality epitaxial layer. In SITEK, J. -- VAJDA, J. -- JAMNICKÝ, I. APCOM 2019. St. Louis: AIP Publishing, 2019, ISBN 978-0-7354-1873-8.

Original name: Electrical properties of detector schottky diodes based on 4H-SiC high quality epitaxial layer
Name in Slovak:
Written by (author): Bohumír Zaťko (30%)
Ladislav Hrubčín (10%)
Pavol Boháček (10%)
Jozef Osvald (10%)
doc. Ing. Andrea Šagátová, PhD. (20%)
Mária Sekáčová (5%)
E. Kováčová (5%)
prof. Ing. Vladimír Nečas, PhD. (10%)
Department: Institute of Nuclear and Physical Engineering
Kind of publication: contributions in anthologies, chapters in monographs/textbooks, abstracts
Collection: APCOM 2019
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Original language: English
Publication category: AFD Publikované príspevky na domácich vedeckých konferenciách.
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Year of submission: 2019
Year of transmission: 2019
 
Entry made by: doc. Ing. Andrea Šagátová, PhD.
Last change: 09/28/2019 22:20 (Data import from library)


Source specification:

SITEK, J. -- VAJDA, J. -- JAMNICKÝ, I. APCOM 2019. St. Louis: AIP Publishing, 2019. ISBN 978-0-7354-1873-8.

Original name: APCOM 2019
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Editor: prof. Ing. Jozef Sitek, DrSc. (34%)
doc. Ing. Ján Vajda, CSc. (33%)
Igor Jamnický (33%)
Kind of publication: conference proceedings
ISBN: 978-0-7354-1873-8
Publisher: AIP Publishing
Place of publishing: St. Louis
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Year of publication: 2019
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Year of submission: 2019
Year of transmission:
Last change: 10/19/2019 22:20 (Data import from library)