Novel metallization structures for ohmic contacts on p-GaN and analysis of their by spectroscopical methodsSupervisor: doc. Ing. Jozef Liday, CSc.
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|Project description:||The objective of the project is investigation and development of novel thin-film contact structures for ohmic contacts with low resistance on p-type GaN based on nickel oxide, specifically of Au/NiO/p-GaN and NiO conducting/NiO semiconducting/p-GaN structures.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2004|
|Project close date:||31. 12. 2006|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|