May 20, 2019   4:36 p.m. Bernard
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Novel metallization structures for ohmic contacts on p-GaN and analysis of their by spectroscopical methods

Supervisor: doc. Ing. Jozef Liday, CSc.


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Project description:The objective of the project is investigation and development of novel thin-film contact structures for ohmic contacts with low resistance on p-type GaN based on nickel oxide, specifically of Au/NiO/p-GaN and NiO conducting/NiO semiconducting/p-GaN structures.
Kind of project:VEGA ()
Department:Department of microelectronics (FEEIT)
Project identification:1/1054/04
Project status:Successfully completed
Project start date :01. 01. 2004
Project close date:31. 12. 2006
Number of workers in the project:1
Number of official workers in the project:0