Advanced low dimensional structure development based on compound A3 B5, A2 B6Supervisor: prof. Ing. Jaroslav Kováč, CSc.
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|Project description:||The project is oriented to gain a new knowledge and its application in research and development of low dimensional semiconductor heterostructures based on A3B5 and A2B6 semiconductors mainly GaAs, GaP, InP, GaN, ZnO, MgO and their ternary and quaternary compounds as well as organic semiconductors,for development of advanced optoelectronic and photonic devices utilised in modern information technologies. From this point of view it is directed to design and characterisation of low dimensional structures and devices primarily for application in LEDs, OLEDs, lasers and photodetectors. The epitaxial growth and deposition of the structures will be realised in cooperation with International Laser Center (ILC) and Slovak Academy of sciences (SAS) as well as cooperative Universities. The expected results concern the characterisation of the structures by structural methods: SEM, AFM, STM, measurements of their electrical and optical properties and development of device processing technology for achievement qualitatively new electrical and optical properties of the devices|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2006|
|Project close date:||31. 12. 2008|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|