Optimization of the technology of semiconductor structures by progressive diagnostics methods.Supervisor: doc. Ing. Rudolf Srnánek, PhD.
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|Project description:||The project is directed to acquiring new knowledge in the field of diagnostics of advanced semiconductor structures, incl. nanostructures prepared on the basis of Si, SiGe, SiGeC, GaAs and InP. The project is first of all directed to the simulation and evaluation of electrical and physical properties of semiconductor structures and devices. Improvement of the diagnostic methods and of the methodology of measurement and diagnostics method, mainly of the capacitance, electrochemical capacitance-voltage, four point probe, van der Pauw and PCIV. Diagnostics of nanostructures will be perfomed by our newly developed procedures used in micro-Raman spectroscopy and micro-luminiscence analysis on the of bevelled structures prepared by chemical etching. Verification of the results is conducted by other diagnostics method in collaboration with domestic and foreign laboratories. For solving the project, students of gradual and postgradual study will be engaged. While solving the project, the obtained results will be used to optimize the conditions of preparation of selected semiconductor structures prepared in collaboration with domestic and foreign laboratories. The obtained knowledge will be utilized in the education of technical intelligentsia for the newly established Slovak factories producing semiconductor devices and integrated circuits.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2006|
|Project close date:||31. 12. 2008|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|