Investigation of electrophysical and technological issues of MIS structures with ultra-thin insulator layers for a new generation of unipolar devices.Supervisor: doc. Ing. Ladislav Harmatha, PhD.
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|Project description:||Investigation of the electrophysical properties of MIS structures with thin gate insulator layers with a high dielectric constant (high-k) based on a silicon. Electronic structure modeling of the oxygen and nitrogen-related defects in silicon substrate focused on their origin and effect as the electrical active defects. Investigation of contamination processes in particular technological treatment for the Si unipolar power structures manufacturing. Investigation of the radiation hardness of structures for the high-energy ions detektors.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2006|
|Project close date:||31. 12. 2008|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|