Thin oxide films for advanced MOS structuresSupervisor: doc. Ing. Ladislav Harmatha, PhD.
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|Project description:||The project is aimed at preparation of thin insulating films with high dielectric constant as well as MOS (Metal-Oxide-Semiconductor) structures containing these films. Thin films and MOS structures will be prepared by chemical vapour deposition technique. Electrical properties of the prepared structures will be studied by means of capacitance-voltage, current-voltage and electrical breakdown characteristics. The aim is to integrate thin insulating films with high dielectric constant into MOS structures for silicon based CMOS technology as well as into MOS structures on III-V semiconductor (GaN) base.|
|Kind of project:||APVV ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2005|
|Project close date:||31. 12. 2007|
|Number of workers in the project:||2|
|Number of official workers in the project:||0|