Submicron technologies and (nano) structures of bipolar-CMOS-DMOS FET for smart power electronic devices and intefrated circuits.Supervisor: prof. Ing. Daniel Donoval, DrSc.
This page shows details on the project. The primary projects are displayed together with a list of sub-projects.
|Project description:||1.Design, development and integration of new electronic structures and technologies Bipolar-CMOS-DMOS (BCDMOS) for fabrication of smart power ED´s and IC´s with minimum dimensions in deep submicron region. 2.Acquisition of new original knowledge about electrophysical parameters of submicro-/ nano- meter structures. Analysisy of the influence of defects and non-standard effects (electrically active defects, mechanical stresses, electric field inhomogeneity, thermal gradient and others) on output electrical characteristic and reliability of smart power ED´s and IC´s. 3.Development of diagnostic methods of evalution of selected electro-physical parameters of power semiconductor structures with particular interest on ESD resistance and robustness in switching applications with inductive load (UIS). Extension of coplex laboratory for characterization of semiconductor srtuctures by electrical, optical, and analytical methods.|
|Kind of project:||APVV ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 03. 2006|
|Project close date:||31. 08. 2009|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|