Ohmic Contacts on p-type Gallium Nitride, Quantitative Aspects of AES of Group IIINitrides and of Their AlloysSupervisor: doc. Ing. Jozef Liday, CSc.
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|Project description:||The topic of study are novel thin-film structures based an nickel oxide for low-resistance ohmic contacts to p-GaN. The project is focused on basic research investigating the influence of the parameters of the preparation technology and of the conditions of post-deposition thermal treatment upon the magnitude of the contact resistivity.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2007|
|Project close date:||31. 12. 2009|
|Number of workers in the project:||1|
|Number of official workers in the project:||0|