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Monolitically integrated circuits based on GaAs (GaN) with passive superconducting filters for millimeter wave band.

Supervisor: doc. Ing. Martin Tomáška, PhD.


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Project description:The project is oriented on the preparation, development and study of properties of model structure of monolitically integrated circuits on GaAs or GaN substrates containing active elements based on the semiconductor and passive elements created from Y1Ba2Cu3O7 (YBCO) high temperature superconductor (HTS). The working temperature of the circuit will be 77K (temperature of liquid nitrogen) at which there is an overlap of the optimal properties for both materials. We will study the influence of structural and electrical properties of the layers (dielectric and superconducting) and the influence of temperature annealing on the parameters of model structure which can find application in the millimeter wave band. Successive realization of such a structure means the combination of advantages of MMIC (Monolitically Integrated Circuit) such as small diameters, elimination of soldering of the components, photolitographic treatment with a high quality factor Q of resonant circuits and filters based on HTS.
Kind of project:APVV ()
Department:Department of microelectronics (FEEIT)
Project identification:APVV-51-040605
Project status:Successfully completed
Project start date :01. 03. 2006
Project close date:30. 10. 2009
Number of workers in the project:2
Number of official workers in the project:0