Scanning Capacitance Transient Microscope for semiconductor analysis on the nanoscaleSupervisor: doc. Ing. Ján Hribik, PhD.
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|Project description:||The goal of the project is the investigation of the possibility to analyse the concentration of electrically active defects in semiconductors and of their identification on the nanoscale. A modified and by auxiliary instruments completed sensitive scanning capacitance microscope, developed at the applicants institute within former projects, will be employed. The achievable spatial resolution in dependence on dopant concentration will be studied, assuming response of a minimal statistical assembly, as well as the possibility to interpret the response of small number, eventually of a single defects. The outcome of the project will be a unique scanning probe microscope, capable of local deep level spectroscopy and of mapping the occurence of selected defects in the sample.|
|Kind of project:||VEGA ()|
|Department:||Department of radio and electronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2008|
|Project close date:||31. 12. 2010|
|Number of workers in the project:||3|
|Number of official workers in the project:||0|