Design, preparation and characterization of high speed power electronic devices based on submicron semiconductor suppored by 2/3-D modeling and simulationSupervisor: prof. Ing. Daniel Donoval, DrSc.
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|Project description:||Research and development of advanced rf and very speed power devices for swichting of high voltages and currents. Analysis of electro-physical properties of Bipolar -CMOS-DMOS stuctures whith charge compenzationon Si,Development complementary electrical and analytical diagnostic methods with increasing sensitivity and resolution for identification of week points and localization of defects.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2008|
|Project close date:||31. 12. 2010|
|Number of workers in the project:||2|
|Number of official workers in the project:||0|