Oct 16, 2019   4:12 a.m. Vladimíra
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Design, preparation and characterization of high speed power electronic devices based on submicron semiconductor suppored by 2/3-D modeling and simulation

Supervisor: prof. Ing. Daniel Donoval, DrSc.

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Project description:Research and development of advanced rf and very speed power devices for swichting of high voltages and currents. Analysis of electro-physical properties of Bipolar -CMOS-DMOS stuctures whith charge compenzationon Si,Development complementary electrical and analytical diagnostic methods with increasing sensitivity and resolution for identification of week points and localization of defects.
Kind of project:VEGA ()
Department:Department of microelectronics (FEEIT)
Project identification:1/0742/08
Project status:Successfully completed
Project start date :01. 01. 2008
Project close date:31. 12. 2010
Number of workers in the project:2
Number of official workers in the project:0