Electro-physical properties and technological issues of Si, GaN and ZnO semiconductor materials and stuctures for a new generation of electronic devices and circuitsSupervisor: doc. Ing. Ladislav Harmatha, PhD.
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|Project description:||Acquiring new knowledge in the region of prospective semiconductor structures, including nanostructures, based on Si, GaN and ZnO materials. Investigation of the properties of MOS structures with thin high-k dielectrics based on silicon substrates. The influence of the gate electrode material and of the high-k insulator layer quality as well as its interfaces with the gate electrode and silicon on the MOS structure behaviour. Extending the physical model of the high-k MOS structure with respect to quantum-mechanical tunneling processes of charge carriers through the potential barrier. Electronic structure modeling of oxygen and nitrogen-related defects in a silicon substrate focused on their origin and effect as electrical active defects. Investigation of the contamination processes, in particular of technological treatment for Si unipolar high voltage and power structures manufacturing. Controlling the minority carrier lifetime by means of gettering and ionizing radiation. Development of diagnostic methods and procedures with the purpose of defect identification as well as analysis of degradation influences on the structures and devices prepared on alternative semiconductor materials also for some photovoltaic applications.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2009|
|Project close date:||31. 12. 2012|
|Number of workers in the project:||2|
|Number of official workers in the project:||0|