CHaracterization of electrical properties of HEMT and MOSHFET transistors on AlGaN(InAlN)/GaN heterostructures supported by 2/3-D MODeling and SIMulationSupervisor: prof. Ing. Daniel Donoval, DrSc.
This page shows details on the project. The primary projects are displayed together with a list of sub-projects.
|Project description:||Characterization and analysis of e1ectrical properties of HEMT and MOSHFET transistors on A1GaN(InAlN)/GaN heterostructures supporte by 213-D modeling and simulation. Extraction of selected electrophysical parameters from experimental characteristics and design of model structures fur simulation of electrical properties of selected structures (device simulation). Analysis of the influence of structure geometry and type on its electrophysical properties. Calibration of parameters of electrophysical models and optimization of designed structures of power transistors.|
|Kind of project:||APVV - Program LPP ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 09. 2009|
|Project close date:||31. 08. 2012|
|Number of workers in the project:||3|
|Number of official workers in the project:||0|