Modelling and simulation of electrical properties of structures based on wide band gap semiconductorsSupervisor: Ing. Juraj Racko, CSc.
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|Project description:||The growing demands on reliability of electron devices along with their miniaturization down to the nanometre scale require a better knowledge of novel phenomena and charge transport mechanisms through physical interfaces. An important role belongs to modelIing and simulation that can be utilized efficiently in physical interpretation of experimental results, in forecasting the properties and optimizing the processes of fabrication of novel structures. This is why we will design a new mathematicai and physical model of the quantum-mechanical charge transport in wide band gap semiconductors through potential barriers including indirect tunnelling via surface traps present at heterojunctions, metal-semiconductor and insulator-semiconductor interfaces. These models will be applied to power devices on GaN based heterostructures but also in the development of solar cells based on amorphous silicon a-Si:H with crystalline c-Si.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2010|
|Project close date:||31. 12. 2011|
|Number of workers in the project:||12|
|Number of official workers in the project:||0|