Optimized ohmic contacts to p-GaN, contribution to quantitative Auger analysis of group III nitridesSupervisor: doc. Ing. Jozef Liday, CSc.
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|Project description:||Detailed research of novel metallization schemes for ohmic contacts to p-GaN based on NiOx with a low content of oxygen and addition of ap-type dopant (Zn, Mg) for increasing the hole concentration in the surface region of GaN. The effects of preparation parameters of the metallic layers and of their thermal treatment in 02 and N2 ambients upon the contact resistivity will be examined thoroughly. From the correlation of the contact resistivity with the elemental depth distribution measured by AES and XPS it will be possible to gain new knowledge on the influence of single elements and preparation parameters on the quality of contacts. The project involves also basic research in the field of quantitative aspects of AES. Sensitivity factors and sputtering yields for the elements contained in gallium and aluminium nitrides and in their alloys will be found. Their knowledge is essential for accurate quantitative assessment of the composition of similar materials, thus also of the examined contact structures.|
|Kind of project:||VEGA ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2010|
|Project close date:||31. 12. 2011|
|Number of workers in the project:||5|
|Number of official workers in the project:||0|