Production of new trasparent conductive oxides for photovoltaic and optoelectronic application.Supervisor: Ing. Michal Ružinský, PhD.
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|Project description:||The aim of the project is to fabricate by sputtering p-type ZnO thin films, from ZnN target, with enhanced transparency and conductivity so to be used as p-type ohmic and transparent contacts on GaAs/AlGaAs optoelectronic and photovoltaic devices. Preparation and research novel transparent conductive oxide TCO structures ZnO p-type prepared by a) rf sputtering using of ZnN target in plasma enviroment containing oxygen gas b) ZnN thin films will be converted into p-type ZnO by oxidation. The realization of p/n junctions based on TCO materials would lead to new area of practical transparent optoelectronic devices and applications. The wide band-gap of TCOs will enable the development of all-transparent UV optoelectronic devices not only emitting but also detecting at short wavelengths, with enormous potential impacts in consumer produts.|
|Kind of project:||Bilaterálna spolupráca - SR - Grécko ()|
|Department:||Department of electrotechnology (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2005|
|Project close date:||30. 06. 2007|
|Number of workers in the project:||2|
|Number of official workers in the project:||0|