Jan 29, 2020   0:55 a.m. Gašpar
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Advanced Semiconductor Heterostructures and Nanostructures Characterization and Processing for Optoelectronic Devices

Supervisor: prof. Ing. Jaroslav Kováč, CSc.

Basic information   Workers      

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Project description:This project is focused on gaining a new knowledge in the field of development, growth and characterisation of GaAs, AlGaAs, InGaAs, InP, GaN semiconductor heterostructures. The optimization of the structure properties is realized by employment of progressive diagnostic methods of structural, electrical and optical properties measurements. The optimised structures will be the base for development of optoelectronic devices utilised in information technologies.
Kind of project:MVTS ()
Department:Department of microelectronics (FEEIT)
Project identification:S/P-B-kov
Project status:Successfully completed
Project start date :01. 01. 2006
Project close date:31. 12. 2008
Number of workers in the project:2
Number of official workers in the project:0