Technology and Characterization of Advanced Semiconductor Heterostructures for Micro and Optoelectronic DevicesSupervisor: prof. Ing. Jaroslav Kováč, CSc.
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|Project description:||The project is oriented to gain a new knowledge and its application in research and development of advanced nano-dimensional semiconductor structures based on A3B5 and A2B6 semiconductors mainly GaAs, GaN, ZnO and their ternary and quaternary compounds. From this point of wiw the project is derected to development of microelectronic and photonic devices utilizing their unique physical properties primarily for aplication in HEMTs, HBTs, LEDs, lasers and photodetectors. The expected results concern the devices design and technology development for achievement qualitatively new electrical, microwave and optical properties of the devices based on nano-dimensional structures along with development of advanced structural, electrical and optical characterization methods.|
|Kind of project:||Bilaterálna spolupráca - SR - Poľsko ()|
|Department:||Department of microelectronics (FEEIT)|
|Project status:||Successfully completed|
|Project start date :||01. 01. 2010|
|Project close date:||31. 12. 2011|
|Number of workers in the project:||2|
|Number of official workers in the project:||0|